Conduction and Switching Loss Reduction of Lateral Power Diode on Silicon-on-Insulator Substrate with Trenched Buried Oxide Layer

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概要

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• We have investigated the static and dynamic characteristics of high voltage lateral power diode (L-Diode) on silicon-on-insulator (SOI) substrate with planar / trenched buried oxide (Box) layer on the basis of device simulations. The conduction loss of the conventional L-Diode with planar Box layer is found to be reduced as a result of improving blocking capability by trenching the Box layer. In addition, the switching loss of the conventional L-Diode with planar Box layer, which stems from the second peak of the recovery current, is substantially reduced by adopting the trenched Box layer with suppression of the dynamic avalanche phenomenon.

• The Institute of Electronics, Information and Communication Engineersの論文

著者

• Funaki Tsuyoshi

  Division Of Electrical Electronic And Information Engineering Graduate School Of Engineering Osaka U

• Takahashi Shigeki

  Semiconductor Process R&D Division, DENSO CORPORATION

• Shiraki Satoshi

  Semiconductor Process R&D Division, DENSO CORPORATION

• Ashida Youichi

  Semiconductor Process R&D Division, DENSO CORPORATION

• Hiruma Atsuyuki

  Advanced Electric Technology R&D Department, DENSO CORPORATION

• Ashida Youichi

  Semiconductor Process R&D Division, DENSO CORPORATION

• Hiruma Atsuyuki

  Advanced Electric Technology R&D Department, DENSO CORPORATION

• Shiraki Satoshi

  Semiconductor Process R&D Division, DENSO CORPORATION

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• Conduction and Switching Loss Reduction of Lateral Power Diode on Silicon-on-Insulator Substrate with Trenched Buried Oxide Layer
• Isolated Large Bipolar Pulse(ILBP) Produced by lightning Discharge in Winter Thunderstorm

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