High-Performance Thin Film Transistor with Amorphous InOSnOZnO Channel Layer (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
スポンサーリンク
概要
著者
-
Yano Koki
Advanced Technology Research Laboratories Idemitsu Kosan Co. Ltd.
-
Tomai Shigekazu
Advanced Technology Research Laboratories Idemitsu Kosan Co. Ltd.
-
Matsuzaki Shigeo
Advanced Technology Research Laboratories Idemitsu Kosan Co. Ltd.
-
Nishimura Mami
Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293, Japan
-
Itose Masayuki
Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293, Japan
-
Matuura Masahide
Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293, Japan
-
Kasami Masashi
Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293, Japan
-
Kawashima Hirokazu
Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293, Japan
-
Utsuno Futoshi
Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293, Japan
関連論文
- High-Performance Thin Film Transistor with Amorphous InOSnOZnO Channel Layer (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
- High-Mobility Thin-Film Transistors with Polycrystalline In-Ga-O Channel Fabricated by DC Magnetron Sputtering