Improving the Laser-Induced-Damage Tolerance Characteristics of 4-Dimethylamino-N-methyl-4-stilbazoliumtosylate Crystals for THz Wave Generation by Annealing
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
-
Ochiai Hiroaki
Graduate School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan
-
Suizu Koji
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
-
Uchida Hirohisa
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
-
Shibuya Takayuki
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
-
Kawase Kodo
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
関連論文
- Theoretical Study of the Stability of X@B6 and X@B12 Clusters: $\text{X}=\text{H--Br}$ in Crystalline Silicon
- Improving the Laser-Induced-Damage Tolerance Characteristics of 4-Dimethylamino-N-methyl-4-stilbazoliumtosylate Crystals for THz Wave Generation by Annealing
- 800-nm Band Cross-Polarized Photon Pair Source Using Type-II Parametric Down-Conversion in Periodically Poled Lithium Niobate
- Generation of Cross-Polarized Photon Pairs via Type-II Third-Order Quasi-Phase Matched Parametric Down-Conversion