Engineering of Si-Rich Nitride Charge-Trapping Layer for Highly Reliable Metal-Oxide-Nitride-Oxide-Semiconductor Type NAND Flash Memory with Multi-Level Cell Operation
スポンサーリンク
概要
著者
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FUKUMOTO Atsushi
Advanced Development Laboratory, Sony Corporation
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Fujitsuka Ryota
Advanced Memory Development Center, Semiconductor Company, Toshiba Corporation, Yokkaichi, Mie 512-8550, Japan
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Sekine Katsuyuki
Advanced Memory Development Center, Semiconductor Company, Toshiba Corporation, Yokkaichi, Mie 512-8550, Japan
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Sekihara Akiko
Advanced Memory Development Center, Semiconductor Company, Toshiba Corporation, Yokkaichi, Mie 512-8550, Japan
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Fujita Junya
Advanced Memory Development Center, Semiconductor Company, Toshiba Corporation, Yokkaichi, Mie 512-8550, Japan
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Aiso Fumiki
Advanced Memory Development Center, Semiconductor Company, Toshiba Corporation, Yokkaichi, Mie 512-8550, Japan
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Ozawa Yoshio
Device Process Development Center, Research & Development Center, Toshiba Corporation, Yokohama 235-8522, Japan
関連論文
- Magneto-Optical Detection Using an Optical Phase Shifter in Higher Track Density Land/Groove Recording
- Partial-Response Maximum-Likelihood Detection Method for Magneto-Optical Recording
- Engineering of Si-Rich Nitride Charge-Trapping Layer for Highly Reliable Metal-Oxide-Nitride-Oxide-Semiconductor Type NAND Flash Memory with Multi-Level Cell Operation
- Magneto-Optical Detection Using an Optical Phase Shifter in Higher Track Density Land/Groove Recording