Ozawa Yoshio | Device Process Development Center, Research & Development Center, Toshiba Corporation, Yokohama 235-8522, Japan

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概要

関連著者

FUKUMOTO Atsushi
Advanced Development Laboratory, Sony Corporation
Fujitsuka Ryota
Advanced Memory Development Center, Semiconductor Company, Toshiba Corporation, Yokkaichi, Mie 512-8550, Japan
Sekine Katsuyuki
Advanced Memory Development Center, Semiconductor Company, Toshiba Corporation, Yokkaichi, Mie 512-8550, Japan
Sekihara Akiko
Advanced Memory Development Center, Semiconductor Company, Toshiba Corporation, Yokkaichi, Mie 512-8550, Japan
Fujita Junya
Advanced Memory Development Center, Semiconductor Company, Toshiba Corporation, Yokkaichi, Mie 512-8550, Japan
Aiso Fumiki
Advanced Memory Development Center, Semiconductor Company, Toshiba Corporation, Yokkaichi, Mie 512-8550, Japan
Ozawa Yoshio
Device Process Development Center, Research & Development Center, Toshiba Corporation, Yokohama 235-8522, Japan

著作論文

Engineering of Si-Rich Nitride Charge-Trapping Layer for Highly Reliable Metal-Oxide-Nitride-Oxide-Semiconductor Type NAND Flash Memory with Multi-Level Cell Operation

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