Additional-Body Effects in a Self-Aligned Deca-Nanometer Ultrathin-Body and Buried Oxide Silicon-on-Insulator MetalOxideSemiconductor Field-Effect Transistor : A Three-Dimensional Simulation Study
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics,の論文
著者
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Chen Cheng-hsin
Department Of Gastroenterology And Hepatology Tokyo Medical And Dental University
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Eng Yi-Chuen
Department of Electrical Engineering, National Sun Yat-Sen University, No. 70, Lienhai Rd., Kaohsiung 80424, Taiwan, R.O.C.
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Lin Jyi-Tsong
Department of Electrical Engineering, National Sun Yat-Sen University, No. 70, Lienhai Rd., Kaohsiung 80424, Taiwan, R.O.C.
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Fan Yi-Hsuan
Department of Electrical Engineering, National Sun Yat-Sen University, No. 70, Lienhai Rd., Kaohsiung 80424, Taiwan, R.O.C.
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- Additional-Body Effects in a Self-Aligned Deca-Nanometer Ultrathin-Body and Buried Oxide Silicon-on-Insulator MetalOxideSemiconductor Field-Effect Transistor : A Three-Dimensional Simulation Study