Study of initial growth layer of GaSb on Si(111) by scanning tunneling microscopy (Special issue: Scanning probe microscopy)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Hara Shinsuke
Faculty Of Engineering Osaka University
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Yagishita Kazuki
Faculty of Industrial Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
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Machida Ryuto
Faculty of Industrial Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
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Irokawa Katsumi
Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
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Miki Hirofumi
Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
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Kawazu Akira
Faculty of Science and Engineering, Tokyo Denki University, Hatoyama, Saitama 350-0394, Japan
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Fujishiro Hiroki
Faculty of Industrial Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
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Fuse Kazuhiro
Faculty of Industrial Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
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