Influence of annealing on the structure and 1.54μm photoluminescence of Er-doped ZnO thin films prepared by sol-gel method
スポンサーリンク
概要
著者
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Xu Gang
Key Laboratory of Renewable Energy and Gas Hydrate, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640, China
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Miao Lei
Key Laboratory of Renewable Energy and Gas Hydrate, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640, China
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Xiao Xiudi
Key Laboratory for Renewable Energy and Gas Hydrates, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640, P. R. China
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Ran Fanyong
Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
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Tanemura Sakae
Nanostructures Research Laboratory, Japan Fine Ceramics Center, Nagoya 456-8587, Japan
関連論文
- Influence of annealing on the structure and 1.54μm photoluminescence of Er-doped ZnO thin films prepared by sol-gel method
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