Effects of postetching treatment on molecular-pore-stacking/Cu interconnects for 28nm node and beyond (Special issue: Advanced metallization for ULSI applications)
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
-
Oshida Daisuke
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan
-
Kume Ippei
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan
-
Katsuyama Hirokazu
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan
-
Taiji Toshiji
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan
-
Maruyama Takuya
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan
-
Ueki Makoto
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan
-
Inoue Naoya
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan
-
Iguchi Manabu
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan
-
Fujii Kunihiro
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan
-
Oda Noriaki
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan
-
Sakurai Michio
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan