Selected topics in Applied physics: Technology evolution for silicon nano-electronics

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概要

• 論文の詳細を見る

著者

• Hiramoto Toshiro

  Univ. Tokyo Tokyo Jpn

関連論文

• Selected topics in Applied physics: Technology evolution for silicon nano-electronics
• Device Design of Nanoscale MOSFETs Considering the Suppression of Short Channel Effects and Characteristics Variations(Device,Low-Power, High-Speed LSIs and Related Technologies)
• Short-Channel Characteristics of Variable-Body-Factor Fully-Depleted Silicon-On-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors
• Short Channel Characteristics of Variable Body Factor FD SOI MOSFETs
• Variable Body Effect Factor Fully Depleted Silicon-On-Insulator Metal Oxide Semiconductor Field Effect Transistor for Ultra Low-Power Variable-Threshold-Voltage Complementary Metal Oxide Semiconductor Applications
• Re-Examination of Impact of Intrinsic Dopant Fluctuations on Static RAM (SRAM) Static Noise Margin

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