X-ray photoelectron spectroscopy study of the origin of the improved device performance by a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN/GaN high-electron-mobility transistor
スポンサーリンク
概要
Japan Society of Applied Physics | 論文
- Simulation of atomic-scale ultralow friction of graphite/C60/graphite interface along direction
- Ultrathin Oxynitride Films Formed by Using Pulse-Time-Modulated Nitrogen Beams
- A Steady Operation of n-Type Organic Thin-Film Transistors with Cyano-Substituted Distyrylbenzene Derivative
- Characterization of Depletion Layer using Photoluminescence Technique
- Development of ^Eu Time-Domain Interferometry and Its Application for the Study of Slow Dynamics in Ionic Liquids