Field-effect transistor with deposited graphite thin film (Special issue: Solid state devices and materials)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Inokawa Hiroshi
Research Institute Of Electronics Shizuoka University
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Inokawa Hiroshi
Shizuoka Univ. Hamamatsu Jpn
関連論文
- Single-electron transfer in phosphorous-doped Si nanowire FETs
- Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
- Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
- Effect of UV/ozone Treatment of Nanogap Electrodes for Molecular Devices
- Field-effect transistor with deposited graphite thin film (Special issue: Solid state devices and materials)
- A Field-Effect Transistor with a Deposited Graphite Thin Film
- Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
- Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays