Derivation of electron spin relaxation rate by electron–phonon interaction using a new diagram method

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概要

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• A formula for determining the electron spin relaxation rate of an electron–phonon system is derived using a new spring-loop diagram method. The result properly contains the distribution functions for the electrons and phonons. Therefore, all spin-flip and spin-conserving processes are explained from a microscopic point of view, and physical insight into the quantum dynamics of electron spin in a solid is obtained from the diagram. Photons and phonons are classified on the basis of their spin-flip and spin-conserving processes. This formula is used to calculate the electron spin relaxation rate (γ) in GaAs. The temperature (T) dependence of the relaxation rate obtained by comparison with the experimental result previously reported is γ ∝ T^1.94.

• Institute of Physicsの論文
• 2014-08-05

著者

• Kang Nam

  Department of Applied Nanoscience, Pusan National University, Miryang, Gyeongnam 627-706, Republic of Korea

• Kang Nam

  Department of Applied Nanoscience, Pusan National University, Miryang, Gyeongnam 627-706, Republic of Korea.

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