Surface plasmon enhanced green light emitting diodes with silver nanorod arrays embedded in p-GaN

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概要

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• We demonstrated surface-plasmon (SP) enhanced green light-emitting diodes (LEDs). Three types of Ag nanorod arrays with a minimum distance between the quantum well (QW) and Ag of 20, 40, and 55 nm respectively were fabricated on p-GaN layer. Photoluminescence measurements showed ∼175% emission enhancement for the 20 nm spacing while almost no enhancement for the 55 nm spacing. Simulation result showed that a localized surface plasmon resonance (LSPR) at a wavelength of ∼500 nm generated by Ag nanorod arrays induced InGaN/GaN QW and SP coupling. However, the electrical field of the LSPR generated by Ag nanorods only spread ∼40 nm in the vertical direction in GaN. This simulation result well explains the observation of SP-QW coupling emission enhancement for 20 nm spacing between Ag and QW, and the lack of enhancement for the 55 nm spacing samples.

• Institute of Physicsの論文
• 2014-07-14

著者

• Huang Yaping

  Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, P. R. China.Solid-State Lighting Engineering Re

関連論文

• Defect-induced color-tunable monolithic GaN-based light-emitting diodes
• Surface plasmon enhanced green light emitting diodes with silver nanorod arrays embedded in p-GaN

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