Defect-induced color-tunable monolithic GaN-based light-emitting diodes

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概要

• 論文の詳細を見る

• We have demonstrated defect-induced color-tunable monolithic GaN-based vertical light-emitting diodes (VLEDs). With Ag nanorod arrays embedded in p-GaN, large numbers of Ga vacancies (V<inf>Ga</inf>) were produced during the thermal bonding process in VLED fabrication. V<inf>Ga</inf>-related donor–acceptor pair (DAP) transitions in p-GaN resulted in red emission in photoluminescence (PL) measurements as well as a broad electroluminescence (EL) emission spectrum extending from green to red. In combination with high-emission-efficiency blue InGaN/GaN multiple quantum wells (MQWs), the emission color of VLEDs can be changed from red to white by increasing the injection current.

• Institute of Physicsの論文
• 2014-09-18

著者

• Huang Yaping

  Key Laboratory for Physical Electronics and Devices of the Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, P. R. China.Solid-State Lighting Engineering Re

関連論文

• Defect-induced color-tunable monolithic GaN-based light-emitting diodes
• Surface plasmon enhanced green light emitting diodes with silver nanorod arrays embedded in p-GaN

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