Control of Surface Work Function by Depositing Insulating Oxide Capping Layers

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概要

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• We have studied the work function modulation in pulsed laser deposited nonpolar MgO (100) and polar MgO (100) and LaAlO<inf>3</inf>(100) insulating oxide films on Nb:SrTiO<inf>3</inf>(100) and (111) substrates using Kelvin probe measurements. The work function modulation in MgO/Nb:SrTiO<inf>3</inf>is {\sim}1 eV, which may be understood by the ``electron compression model'', where the leaked-out electrons from Nb:SrTiO<inf>3</inf>surface are pushed back by MgO layer, reducing the surface dipole moment. By forming double insulating top layer in LaAlO<inf>3</inf>/nondoped SrTiO<inf>3</inf>/Nb:SrTiO<inf>3</inf>(100), we have realized the work function as low as {\sim}2.2 eV, which would be originated in the formation of high-density electrons at the LaAlO<inf>3</inf>/nondoped SrTiO<inf>3</inf>interface and can be very close to the top surface. The present results demonstrate that chemically stable oxides can be used as low work function devices employing heterostructure form.

• 2013-11-25

著者

• Susaki Tomofumi

  Secure Materials Center, Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan

• Hosono Hideo

  Secure Materials Center, Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan

関連論文

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• Control of Surface Work Function by Depositing Insulating Oxide Capping Layers
• Control of Surface Work Function by Depositing Insulating Oxide Capping Layers (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)
• Magnetotransport Properties across Verwey Transition in Fe_3O_4(111)Epitaxial Films

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