Spalling of a Thin Si Layer by Electrodeposit-Assisted Stripping

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概要

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• A major goal in solar cell research is to reduce the cost of the final module. Reducing the thickness of the crystalline silicon substrate to several tens of micrometers can reduce material costs. In this work, we describe the electrodeposition of a Ni--P alloy, which induces high stress in the silicon substrate at room temperature. The induced stress enables lift-off of the thin-film silicon substrate. After lift-off of the thin Si film, the mother substrate can be reused, reducing material costs. Moreover, the low-temperature process expected to be improved Si substrate quality.

• 2013-11-25

著者

• Lee Jung-ho

  Department Of Civil Engineering Kangwon National University

• Yoo Bongyoung

  Department Of Bio Nano Technology Hanyang University

• Um Han-Don

  Department of Bionanotechnology, Hanyang University, Ansan, Gyeonggi 426-791, Republic of Korea

• Yoo Bongyoung

  Department of Nano and Solar Energy Engineering, Hanyang University, Ansan, Gyeonggi 426-791, Republic of Korea

• Kwon Youngim

  Department of Nano and Solar Energy Engineering, Hanyang University, Ansan, Gyeonggi 426-791, Republic of Korea

• Yang Changyol

  Department of Nano and Solar Energy Engineering, Hanyang University, Ansan, Gyeonggi 426-791, Republic of Korea

• Yoon Sang-Hwa

  Department of Material Engineering, Hanyang University, Ansan, Gyeonggi 426-791, Republic of Korea

• Lee Jung-Ho

  Department of Chemical Engineering, Hanyang University, Ansan, Gyeonggi 426-791, Republic of Korea

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