Silicon Nanowire Array Solar Cell Prepared by Metal-Induced Electroless Etching with a Novel Processing Technology
スポンサーリンク
概要
- 論文の詳細を見る
We inexpensively fabricated vertically aligned Si nanowire solar cells using metal-induced electroless etching and a novel doping technique. Co-doping of boron and phosphorus was achieved using a spin-on-doping method for the simultaneous formation of a front-side emitter and a back surface field in a one-step thermal cycle. Nickel electroless deposition was also performed in order to form a continuous metal grid electrode on top of an array of vertically aligned Si nanowires. A highly dense array of Si nanowires with low reflectivity was obtained using Ag nanoparticles of optimal size (60–90 nm). We also obtained an open circuit voltage of 544 mV, a short circuit current of 14.68 mA/cm2, and a cell conversion efficiency of 5.25% at 1.5AM illumination. The improved photovoltaic performance was believed to be the result of the excellent optical absorption of the Si nanowires and the improved electrical properties of the electroless deposited electrode.
- 2010-04-25
著者
-
Seo Hong-seok
Department Of Materials And Chemical Engineering Hanyang University
-
Han-Don Um
Department of Bio-Nano Technology, Hanyang University, Ansan 426-791, Korea
-
Um Han-Don
Department of Chemical Engineering, Hanyang University, Ansan 426-791, Korea
-
Jung-Ho Lee
Department of Chemical Engineering, Hanyang University, Ansan 426-791, Korea
-
Jung-Ho Lee
Department of Materials and Chemical Engineering, Hanyang University, Ansan 426-791, Korea
-
Jin-Young Jung
Department of Bio-Nano Technology, Hanyang University, Ansan 426-791, Korea
-
Kwang-Tae Park
Department of Bio-Nano Technology, Hanyang University, Ansan 426-791, Korea
-
S. A.
Department of Materials and Chemical Engineering, Hanyang University, Ansan 426-791, Korea
-
Jung Jin-Young
Department of Bio-Nano Technology, Hanyang University, Ansan 426-791, Korea
-
Sang-Won Jee
Department of Materials and Chemical Engineering, Hanyang University, Ansan 426-791, Korea
-
Sang-Won Jee
Department of Chemical Engineering, Hanyang University, Ansan 426-791, Korea
-
Um Han-Don
Department of Bionanotechnology, Hanyang University, Ansan, Gyeonggi 426-791, Republic of Korea
関連論文
- Epitaxial insertion of Au_5Si nanodiscs during the growth of silicon nanowires
- Compositionally Bi-layered Formation of Interfacial Voids in a Porous Anodic Alumina Template Directly Formed on Si
- Silicon Nanowire Array Solar Cell Prepared by Metal-Induced Electroless Etching with a Novel Processing Technology
- Electrical Characterization of Metal–Silicon Microwire Interface Using Conductive Atomic Force Microscope
- Spalling of a Thin Si Layer by Electrodeposit-Assisted Stripping
- Establishment of Effluent Standards for Industrial Wastewaters in Korea: Current Issues and Suggestions for Future Plan