Layer-Transferred GaN Template by Ion Cut for Nitride-Based Light-Emitting Diodes

概要

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Layer transfer via ion-cut has been developed for GaN to fabricate multiple templates from a high-quality GaN wafer without compromising the crystallinity. Here, we report on the successful fabrication of 4-in. layer-transferred GaN on sapphire. A high quality epitaxial layer is also successfully grown despite the structural degradation in the transferred layer by hydrogen implantation. Fully packaged vertical light-emitting diodes grown on the template exhibit the peak external quantum efficiency of 48.6% and optical output power of 1.8 W at 220 A/cm<sup>2</sup>, suggesting that the template could serve as a low-cost substrate for high-performance nitride devices.
The Japan Society of Applied Physicsの論文
2013-11-25