Park Bongmo | R&D Center, Samsung Corning Precision Materials Co., Ltd., Asan, Chungnam 336-725, Republic of Korea
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概要
- 同名の論文著者
- R&D Center, Samsung Corning Precision Materials Co., Ltd., Asan, Chungnam 336-725, Republic of Koreaの論文著者
関連著者
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Choi Jun-Sung
New Business Division, Samsung Corning Precision Materials Co., Ltd., Asan, Chungnam 336-725, Republic of Korea
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Kim-Lee Hyun-Joon
New Business Division, Samsung Corning Precision Materials Co., Ltd., Asan, Chungnam 336-725, Republic of Korea
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Lim Sung-Keun
New Business Division, Samsung Corning Precision Materials Co., Ltd., Asan, Chungnam 336-725, Republic of Korea
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Chung Roy
R&D Center, Samsung Corning Precision Materials Co., Ltd., Asan, Chungnam 336-725, Republic of Korea
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Kim Donghyun
New Business Division, Samsung Corning Precision Materials Co., Ltd., Asan, Chungnam 336-725, Republic of Korea
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Kim Kyoung-Jun
New Business Division, Samsung Corning Precision Materials Co., Ltd., Asan, Chungnam 336-725, Republic of Korea
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Lee Bo-Hyun
R&D Center, Samsung Corning Precision Materials Co., Ltd., Asan, Chungnam 336-725, Republic of Korea
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Jung Kyung
New Business Division, Samsung Corning Precision Materials Co., Ltd., Asan, Chungnam 336-725, Republic of Korea
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Lee Won
New Business Division, Samsung Corning Precision Materials Co., Ltd., Asan, Chungnam 336-725, Republic of Korea
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Park Bongmo
R&D Center, Samsung Corning Precision Materials Co., Ltd., Asan, Chungnam 336-725, Republic of Korea
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Woo Kwangje
New Business Division, Samsung Corning Precision Materials Co., Ltd., Asan, Chungnam 336-725, Republic of Korea
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Lee Bo-Hyun
R&D Center, Samsung Corning Precision Materials Co., Ltd., Asan, Chungnam 336-725, Republic of Korea
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Chung Roy
R&D Center, Samsung Corning Precision Materials Co., Ltd., Asan, Chungnam 336-725, Republic of Korea
著作論文
- Layer-Transferred GaN Template by Ion Cut for Nitride-Based Light-Emitting Diodes
- Layer-Transferred GaN Template by Ion Cut for Nitride-Based Light-Emitting Diodes