Effect of MeV Electron Beam Irradiation on Graphene Grown by Thermal Chemical Vapor Deposition
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概要
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We explored the effect of MeV electron beam irradiation (MEBI) under ambient conditions on the growth of graphene by thermal chemical vapor deposition. X-ray photoelectron spectroscopy and Raman spectroscopy clearly revealed that the propagation of irradiation mediated-defects and oxidation on graphene transferred onto SiO<inf>2</inf>(300 nm)/Si(001) occurred simultaneously after MEBI. In addition, a positive shift in the charge-neutral Dirac point (CNDP) and suppression of electrical conductivity near the CNDP were observed by electrical transport measurements, indicating p-type doping and the opening of a band-gap of graphene after MEBI.
- 2013-12-25
著者
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An Ki-seok
Thin Film Materials Laboratory Korea Research Institute Of Chemical Technology
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Jung Dae
Department Of Chemical Engineering Konkuk University
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Park Chong-Yun
BK21 Physics Research Division and Center for Nanotubes and Nanostructured Composites (CNNC), Sungkyunkwan University, Suwon 440-746, Republic of Korea
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Kim Yooseok
BK21 Physics Research Division and Center for Nanotubes and Nanostructured Composites (CNNC), Sungkyunkwan University, Suwon 440-746, Republic of Korea
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Lee Su
BK21 Physics Research Division, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic of Korea
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Jung Min
Thin Film Materials Research Group, Korea Research Institute of Chemical Technology (KRICT), Yuseong Post Office Box 107, Daejeon 305-600, Republic of Korea
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Song Wooseok
Thin Film Materials Research Group, Korea Research Institute of Chemical Technology (KRICT), Yuseong Post Office Box 107, Daejeon 305-600, Republic of Korea
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