Charge Dynamics and Electronic Structures of Monolayer MoS
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概要
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THz absorption and spectroscopic ellipsometry were used to investigate the charge dynamics and electronic structures of chemical-vapor-deposited monolayer MoS<inf>2</inf>films. THz conductivity displays a coherent response of itinerant charge carriers at zero frequency. Drude plasma frequency ({\sim}7 THz) decreases with decreasing temperature while carrier relaxation time ({\sim}26 fs) is almost temperature independent. The absorption spectrum of monolayer MoS<inf>2</inf>shows a direct 1.95 eV band gap and charge transfer excitations that are {\sim}0.2 eV higher than those of the bulk counterpart. The ground-state exciton binding energy is found to be about 0.48 eV.
- 2013-12-25
著者
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Liu Hsiang-lin
Department Of Physics National Taiwan Normal University
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Shen Chih-Chiang
Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan
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Liu Hsiang-Lin
Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan
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Hsu Yu-Te
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
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Li Lain-Jong
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
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