Catalyst Temperature Dependence of NH

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概要

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• In this paper, we report an independent catalyst heating system on the Pt-catalyst metal organic vapor phase epitaxy (MOVPE) for Indium nitride (InN) growth, and the dependence of the NH<inf>3</inf>decomposition rate on the Pt catalyst temperature (RT to 1000 °C) using a quadrupole mass spectrometer (Q-MS). When the catalyst temperature is increased above the growth temperature of InN, the NH<inf>3</inf>decomposition rate is enhanced. The grain size of InN becomes larger and the full width at half maximum (FWHM) of the X-ray rocking curve (XRC) was drastically decreased. The increase of N atoms results in the incorporation of nitrogen into the InN layer and thus improves the crystal quality of InN. However, active H increases sharply when the catalyst heater temperature is over about 850 °C. Therefore, a great improvement in the crystal quality of InN film is expected by optimizing the growth condition including a catalyst temperature not exceeding 850 °C.

• 2013-08-25

著者

• Hashimoto Akihiro

  University Of Tsukuba

• YAMAMOTO Akio

  University of Tokyo

• Mihara Akihiro

  University of Fukui, Fukui 910-8507, Japan

• Sugita Kenichi

  University of Fukui, Fukui 910-8507, Japan

• Hironaga Daizo

  University of Fukui, Fukui 910-8507, Japan

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