A Comparative Study on Metalorganic Vapor Phase Epitaxial InGaN with Intermediate In Compositions Grown on GaN/Sapphire and AlN/Si(111) Substrates

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概要

• 論文の詳細を見る

• 本著作物の著作権は公益社団法人応用物理学会に帰属します。／©（公社）応用物理学会　2013／© 2013 The Japan Society of Applied Physics

• 2013-00-00

著者

• YAMAMOTO Akio

  University of Tokyo

• Mihara Akihiro

  University of Fukui, Fukui 910-8507, Japan

• Zheng Yangdong

  University of Fukui, Fukui 910-8507, Japan

• Shigekawa Naoteru

  Osaka City University, Osaka 615-8510, Japan

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• A Comparative Study on Metalorganic Vapor Phase Epitaxial InGaN with Intermediate In Compositions Grown on GaN/Sapphire and AlN/Si(111) Substrates
• Catalyst Temperature Dependence of NH
• Catalyst Temperature Dependence of NH₃ Decomposition for InN Grown by Metal Organic Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)

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