Morphology Evolution of Pulsed-Flux Ga-Polar GaN Nanorod Growth by Metal Organic Vapor Phase Epitaxy and Its Nucleation Dependence

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概要

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• We fabricated selectively grown Ga-polar GaN nanorods by optimizing metal organic vapor phase epitaxy (MOVPE) growth parameters using continuous- and pulsed-mode approaches. Nucleation layers were grown using continuous mode with H<inf>2</inf>or N<inf>2</inf>as carrier gas, which resulted in pyramidal or hexagonal shapes, respectively. The growth mechanism of nanorods was further studied for the nucleation layer grown with the H<inf>2</inf>case, in which the pyramidal shape of the nucleation layer was observed to be flattened during the initial step of pulsed-mode growth and then evolved into nanorods by Ga clustering on the top c-plane.

• 2013-07-25

著者

• Lee Dong-seon

  School Of Information And Communications Gwangju Institute Of Science And Technology

• Bae Si-Young

  School of Information and Communications, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

• Lee Dong-Seon

  School of Information and Communications, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

• Min Jung-Hong

  School of Information and Communications, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

• Lee Jun-Yeob

  School of Information and Communications, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

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• Morphology Evolution of Pulsed-Flux Ga-Polar GaN Nanorod Growth by Metal Organic Vapor Phase Epitaxy and Its Nucleation Dependence

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