Improved Photovoltaic Effects of a Vertical-Type InGaN/GaN Multiple Quantum Well Solar Cell

スポンサーリンク

概要

• 論文の詳細を見る

• We investigated the photovoltaic performance of InGaN/GaN multiple quantum well (MQW) solar cells by comparing vertical-type and conventional lateral-type solar cells. We found that both bottom reflector and front surface texturing of vertical-type InGaN/GaN MQW solar cells enhanced light absorption by 45%, leading to an enhancement of the short circuit current density ($J_{\text{SC}}$) by 1.6 times, compared to that of a lateral-type structure. For the vertical-type InGaN/GaN solar cell, Ag was used for bottom reflectors and pyramid textured surfaces were formed by KOH etching after a lift-off process, whereas lateral-type structures were fabricated on sapphire substrates having smooth surfaces. As a result, the vertical InGaN/GaN MQW solar cells showed a high fill factor of 80.0% and conversion efficiency of 2.3%; in contrast, the conventional lateral structure produced a fill factor of 77.6% and a conversion efficiency of 1.4%.

• 2011-09-25

著者

• Shim Jae-phil

  School Of Information And Communications Gwangju Institute Of Science And Technology

• Lee Dong-seon

  School Of Information And Communications Gwangju Institute Of Science And Technology

• Namkoong Gon

  Department of Electrical and Computer Engineering, Old Dominion University, Applied Research Center, Newport News, VA 23606, U.S.A.

• Bae Si-Young

  School of Information and Communications, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

• Jeon Seoung-Ran

  Korea Photonics Technology Institute, Gwangju 500-779, Korea

• Lee Dong-Seon

  School of Information and Communications, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea

関連論文

• Improved Photovoltaic Effects of a Vertical-Type InGaN/GaN Multiple Quantum Well Solar Cell
• InGaN-Based p-i-n Solar Cells with Graphene Electrodes
• Optical Characterization of Double Peak Behavior in {10\bar{1}1} Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substrates
• Optimization of Active Layer Thickness in Planar Organic Solar Cells via Optical Simulation Methods
• Morphology Evolution of Pulsed-Flux Ga-Polar GaN Nanorod Growth by Metal Organic Vapor Phase Epitaxy and Its Nucleation Dependence

スポンサーリンク