High-Performance GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO
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概要
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GaN-based light-emitting diodes (LEDs) on patterned sapphire substrate (PSS) with a novel patterned SiO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf>passivation layer have been proposed and fabricated. Due to the excellent uniformity and compactness of atomic layer deposition (ALD) for the first Al<inf>2</inf>O<inf>3</inf>layer, a high passivation effect has been achieved. The second SiO<inf>2</inf>layer with patterned hemisphere arrays decreases the total internal reflection (TIR) and, hence, increases the light output power (LOP). With a 60 mA injection current, an enhancement of 21.6% in LOP was realized for the LED with an appropriately patterned SiO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf>passivation layer as compared with the conventional LED with a SiO<inf>2</inf>passivation layer.
- 2013-07-25
著者
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Cui Yiping
Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
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Guo Hao
Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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Zhang Xiong
Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
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Chen Hongjun
Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
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Liu Honggang
Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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Zhang Peiyuan
Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
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Liao Qinghua
Department of Physics, Nanchang University, Nanchang 330031, China
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Hu Shujuan
Department of Physics, Nanchang University, Nanchang 330031, China
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Chang Hudong
Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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Sun Bing
Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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Wang Shengkai
Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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