Enhanced Performance of GaN-Based Light-Emitting Diodes by Using Al Mirror and Atomic Layer Deposition-TiO_2/Al_2O_3 Distributed Bragg Reflector Backside Reflector with Patterned Sapphire Substrate
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概要
- 論文の詳細を見る
- 2013-02-25
著者
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Liu Honggang
Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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Zhang Peiyuan
Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
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Wang Shengkai
Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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Guo Hao
Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
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ZHANG Xiong
Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University
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CUI Yiping
Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University
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CHEN Hongjun
Microwave Device and IC Department, Institute of Microelectronics of Chinese Academy of Sciences
関連論文
- Synthesis and Two-photon Properties of New Perylene Bisimide Derivatives
- Dirac Point and Cloaking Based on Honeycomb Lattice Photonic Crystal
- High-Performance GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO
- High-Performance GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO₂/Al₂O₃ Passivation Layer
- Dirac Point and Cloaking Based on Honeycomb Lattice Photonic Crystal
- Enhanced Performance of GaN-Based Light-Emitting Diodes by Using Al Mirror and Atomic Layer Deposition-TiO_2/Al_2O_3 Distributed Bragg Reflector Backside Reflector with Patterned Sapphire Substrate