Effects of Substrate Miscut on the Quality of In
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概要
- 論文の詳細を見る
In<inf>0.3</inf>Ga<inf>0.7</inf>As layers were grown by metal--organic chemical vapor deposition utilizing compositionally step-graded (Al)GaInP buffers on different misorientated GaAs substrates. The substrate miscut toward the [110] direction promotes \alpha dislocation glide along the [110] direction while it exerts an adverse effect on \beta dislocations in the perpendicular direction with increasing the miscut degree. In comparison with the 2° and 7° samples, a better surface morphology with a RMS roughness of 5.77 nm and a lower density of threading dislocations indicated by the photoluminescence and transmission electron microscopy results were obtained in the 15° sample.
- 2013-06-25
著者
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Yang Hui
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215125, People' s Republic of China
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Dong Jianrong
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215125, People' s Republic of China
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Zeng Xulu
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215125, People' s Republic of China
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Li Kuilong
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215125, People' s Republic of China
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Sun Yurun
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215125, People' s Republic of China
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Zhao Yongming
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215125, People' s Republic of China
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Yu Shuzhen
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215125, People' s Republic of China
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Zhao Chunyu
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215125, People' s Republic of China
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Zhao Chunyu
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215125, People' s Republic of China
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Zhao Yongming
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215125, People' s Republic of China
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Sun Yurun
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215125, People' s Republic of China
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Yu Shuzhen
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215125, People' s Republic of China
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Li Kuilong
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215125, People' s Republic of China
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ZHAO Chunyu
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS
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ZHAO Yongming
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS
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YANG Hui
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS
関連論文
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