Effects of Substrate Miscut on the Quality of In0.3Ga0.7As Layers Grown on Metamorphic (Al)GaInP Buffers by Metal-Organic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 2013-06-25
著者
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Dong Jianrong
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215125, People' s Republic of China
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Zeng Xulu
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215125, People' s Republic of China
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Sun Yurun
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215125, People' s Republic of China
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Yu Shuzhen
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215125, People' s Republic of China
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Li Kuilong
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215125, People' s Republic of China
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ZHAO Chunyu
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS
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ZHAO Yongming
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS
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YANG Hui
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS
関連論文
- Effect of High-Temperature Pregrowth Treatment on the Surface Morphology of GaInP Epilayers on Ge Grown by Metal-Organic Vapor-Phase Epitaxy
- Effects of Substrate Miscut on the Quality of In
- Effects of Substrate Miscut on the Quality of In0.3Ga0.7As Layers Grown on Metamorphic (Al)GaInP Buffers by Metal-Organic Chemical Vapor Deposition