Performance Estimation of Silicon-Based Self-Cooling Device

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概要

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• Since self-cooling devices were first proposed, several materials have been tested for their suitability to be used in them. A self-cooling device requires a high Seebeck coefficient, a low electrical resistivity, and a high thermal conductivity. Here, we report experimental results for single-crystal silicon doped with boron. Samples were fabricated with carrier densities in the range of 2.0\times 10^{15} to 1.6\times 10^{19} cm^-3, and their Seebeck coefficient and electrical resistivity were measured. Silicon with a carrier density of 1.6\times 10^{19} cm^-3has a power factor of 4.8\times 10^{-3} W/(K²m) at room temperature. The cooling capability of a self-cooling device was estimated using a one-dimensional model. The results suggest that a self-cooling device based on silicon with a high carrier density can have a higher heat removal performance than a conventional silicon power device of the same size.

• 2013-05-25

著者

• Kawahara Toshio

  Center Of Applied Superconductivity And Sustainable Energy Research Chubu University

• Fukuda Shinji

  Department Of Biochemistry And Molecular Genetics Ehime University Graduate School Of Medicine

• Yamaguchi Satarou

  Center of Applied Superconductivity and Sustainable Energy Research, Kasugai, Aichi 487-8501, Japan

• Kawahara Toshio

  Center of Applied Superconductivity and Sustainable Energy Research, Kasugai, Aichi 487-8501, Japan

• Sabi Yuichi

  Advanced Materials Laboratories, Sony Corporation, Atsugi, Kanagawa 243-0021, Japan

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