Influence of Femtosecond Laser Pulse Number on Spike Geometry of Microstructured Silicon
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概要
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We experimentally found that there is an approximately linear relation between the average height/interval distance of spikes and the number of injected femtosecond laser pulses for the pulse number below a threshold. The growth rate of the spike height as a function of the irradiated pulse number is dependent on the gas pressure. When the pulse number exceeds the threshold, a hole can be observed on the silicon surface. Furthermore, the depth of the hole increases with the increase of pulse number. These results are important for optimizing the surface microstructure for silicon-based solar cell fabrication.
- 2013-05-25
著者
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Zhu Yiming
Engineering Research Center Of Optical Instrument And System Ministry Of Education University Of Shanghai For Science And Technology
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Cai Bin
Engineering Research Center of Optical Instrument and System, Ministry of Education, Shanghai Key Lab of Modern Optical System, Institute of Optical-Electrical Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
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Hong Miao
Engineering Research Center of Optical Instrument and System, Ministry of Education, Shanghai Key Lab of Modern Optical System, Institute of Optical-Electrical Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
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Fang Dan
Engineering Research Center of Optical Instrument and System, Ministry of Education, Shanghai Key Lab of Modern Optical System, Institute of Optical-Electrical Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
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Peng Yan
Engineering Research Center of Optical Instrument and System, Ministry of Education, Shanghai Key Lab of Modern Optical System, Institute of Optical-Electrical Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
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Zhou Yunyan
Engineering Research Center of Optical Instrument and System, Ministry of Education, Shanghai Key Lab of Modern Optical System, Institute of Optical-Electrical Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
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Chen Xiangqian
Engineering Research Center of Optical Instrument and System, Ministry of Education, Shanghai Key Lab of Modern Optical System, Institute of Optical-Electrical Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
関連論文
- Stable Circularly Polarized Emission from a Vertical-Cavity Surface-Emitting Laser with a Chiral Reflector
- Influence of Femtosecond Laser Pulse Number on Spike Geometry of Microstructured Silicon
- Influence of Femtosecond Laser Pulse Number on Spike Geometry of Microstructured Silicon