Cu
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概要
- 論文の詳細を見る
We have fabricated Cu<inf>2</inf>Sn<inf>1-x</inf>Ge<inf>x</inf>S<inf>3</inf>thin-film solar cells by cosputtering deposition of Cu and Sn followed by sulfurization in S and GeS<inf>2</inf>vapors. The conversion efficiency was significantly improved to be as high as 6.0% compared with the values of Cu<inf>2</inf>SnS<inf>3</inf>solar cells similarly fabricated. Scanning electron microscopy observation revealed that alloying with Ge accelerated the grain growth during the sulfurization process, contributing to the improvement in the conversion efficiency. The bandgap energy of Cu<inf>2</inf>Sn<inf>0.83</inf>Ge<inf>0.17</inf>S<inf>3</inf>was about 1.0 eV, which is suitable for bottom cells used in double-junction solar cells.
- 2013-04-25
著者
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Motohiro Tomoyoshi
Toyota Central R & D Labs. Inc.
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Takeda Yasuhiko
Toyota Central R & D Labs. Inc.
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Umehara Mitsutaro
Toyota Central Research and Development Laboratories, Inc., Nagakute, Aichi 480-1192, Japan
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Motohiro Tomoyoshi
Toyota Central Research and Development Laboratories Inc., Nagakute, Aichi 480-1192, Japan
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Takeda Yasuhiko
Toyota Central Research and Development Laboratories Inc., Nagakute, Aichi 480-1192, Japan
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Sakai Takenobu
Toyota Motor Corporation, Susono, Shizuoka 410-1193, Japan
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Awano Hiroki
Toyota Motor Corporation, Susono, Shizuoka 410-1193, Japan
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Maekawa Ryosuke
Toyota Motor Corporation, Susono, Shizuoka 410-1193, Japan
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Umehara Mitsutaro
Toyota Central Research and Development Laboratories Inc., Nagakute, Aichi 480-1192, Japan
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UMEHARA Mitsutaro
Toyota Central Research and Development Laboratories Inc.
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SAKAI Takenobu
Toyota Motor Corporation
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