Electron Spin Resonance Study of Organic Interfaces in Ion Gel-Gated Rubrene Single-Crystal Transistors
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概要
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Organic interfaces of rubrene single crystals (RSCs) in ion gel-gated electric double-layer transistors (EDLTs) were investigated by electron spin resonance (ESR). The EDLTs were fabricated by laminating ion-gel films onto RSCs. Clear ESR signals due to field-injected holes in RSCs were successfully observed at low gate voltages, showing a high spin concentration due to the high capacitance of EDLTs. The analyses of anisotropic ESR signals and its gate-voltage dependence show that the bulk molecular orientation at RSCs' interfaces is preserved without forming deep trapping levels, which demonstrate that organic interfaces in RSC-EDLTs are clean and undamaged under a strong electric field in EDLTs.
- 2013-04-25
著者
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Iwasa Yoshihiro
Department Of Applied Physics And Quantum Phase Electronics Center University Of Tokyo
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Takenobu Taishi
Department Of Applied Physics Graduate School Of Advanced Science And Engineering Waseda University
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Iwasa Yoshihiro
Department of Applied Physics and Quantum-Phase Electronics Center, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Takenobu Taishi
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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Marumoto Kazuhiro
Division of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Takahashi Yuki
Division of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Tsuji Masaki
Division of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yomogida Yohei
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan
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TAKAHASHI Yuki
Division of Materials Science, University of Tsukuba
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TSUJI Masaki
Division of Cellular and Molecular Toxicology, Biological Safety Research Center, National Institute of Health Sciences
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MARUMOTO Kazuhiro
Division of Materials Science, University of Tsukuba
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