Single-Atomic-Level Probe of Transient Carrier Dynamics by Laser-Combined Scanning Tunneling Microscopy
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概要
- 論文の詳細を見る
The first application of laser-combined time-resolved scanning tunneling microscopy (STM) to single-atomic-level analysis was demonstrated. The dynamics of photoinduced holes, transiently trapped at the surface and recombined with the electrons tunneling from the STM tip to the in-gap states associated with single-(Mn,Fe)/GaAs(110) structures, was successfully probed on the atomic level for the first time. In addition, light-modulated scanning tunneling spectroscopy (LT-STS) was performed for energy--space analysis in conjunction with time-resolved measurement and shown useful for developing the laser-combined STM techniques for further advances.
- 2013-03-25
著者
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Takeuchi Osamu
Graduate School Of Dentistry (operative Dentistry) Osaka Dental University
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Shigekawa Hidemi
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Yoshida Shoji
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Yokota Munenori
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Oigawa Haruhiro
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Mera Yutaka
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Takeuchi Osamu
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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