Direct Probing of Transient Photocurrent Dynamics in p-WSe2 by Time-Resolved Scanning Tunneling Microscopy
スポンサーリンク
概要
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We have carried out time-resolved scanning tunneling microscopy on a layered semiconductor with an indirect bandgap, p-WSe2, and the dynamics of nonequilibrium photocurrent generated by ultrashort-pulse-laser excitation was analyzed. The photocurrent dynamics reflecting the flow of excited photocarriers at the surface, which is determined by the balance between the diffusion and tunneling rates, was successfully probed. Furthermore, the excess minority carriers transiently trapped at the surface for a few nanoseconds, which produce a transient surface photovoltage and cannot be detected by conventional methods, were directly observed and evaluated.
- 2013-01-25
著者
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Takeuchi Osamu
Graduate School Of Dentistry (operative Dentistry) Osaka Dental University
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Shigekawa Hidemi
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Yoshida Shoji
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Yokota Munenori
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Mera Yutaka
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Takeuchi Osamu
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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Terada Yasuhiko
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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SHIGEKAWA Hidemi
Graduate School of Pure and Applied Sciences, University of Tsukuba
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MERA Yutaka
Graduate School of Pure and Applied Sciences, University of Tsukuba
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YOSHIDA Shoji
Graduate School of Pure and Applied Sciences, University of Tsukuba
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YOKOTA Munenori
Graduate School of Pure and Applied Sciences, University of Tsukuba
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