Demonstration of 1.0 μm InGaAs High-Power and Broad Spectral Bandwidth Superluminescent Diodes by Using Dual Quantum Well Structure

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概要

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• We demonstrate 1.0 μm InGaAs high-power and broad spectral bandwidth superluminescent diodes (SLDs). Based on the experimental analysis, it is clarified that the important design parameters are the emission wavelength difference between the dual quantum wells, and the optical confinement factor in the dual quantum well structure to achieve high power and broad spectral bandwidth simultaneously. As a result, we obtained SLDs with 33.4 mW CW power and 77.5 nm full width at half maximum (FWHM) spectral bandwidth. These results correspond to a 1.4-fold increase in spectral bandwidth and a 1.65-fold increase in output power, compared with the single quantum well SLD.

• 2013-01-25

著者

• Asano Hideki

  Frontier Core-Technology Laboratories, FUJIFILM Corporation, Kaisei, Kanagawa 258-8577, Japan

• Ohgoh Tsuyoshi

  Frontier Core-Technology Laboratories, FUJIFILM Corporation, Kaisei, Kanagawa 258-8577, Japan

• Mukai Atsushi

  Frontier Core-Technology Laboratories, FUJIFILM Corporation, Kaisei, Kanagawa 258-8577, Japan

• Yaguchi Junya

  Frontier Core-Technology Laboratories, FUJIFILM Corporation, Kaisei, Kanagawa 258-8577, Japan

• YAGUCHI Junya

  Frontier Core-Technology Laboratories, FUJIFILM Corporation

• OHGOH Tsuyoshi

  Frontier Core-Technology Laboratories, FUJIFILM Corporation

関連論文

• Demonstration of 1.0 μm InGaAs High-Power and Broad Spectral Bandwidth Superluminescent Diodes by Using Dual Quantum Well Structure
• Demonstration of 1.0μm InGaAs High-Power and Broad Spectral Bandwidth Superluminescent Diodes by Using Dual Quantum Well Structure

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