Demonstration of 1.0μm InGaAs High-Power and Broad Spectral Bandwidth Superluminescent Diodes by Using Dual Quantum Well Structure
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概要
- 論文の詳細を見る
- 2013-01-25
著者
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Asano Hideki
Frontier Core-Technology Laboratories, FUJIFILM Corporation, Kaisei, Kanagawa 258-8577, Japan
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Ohgoh Tsuyoshi
Frontier Core-Technology Laboratories, FUJIFILM Corporation, Kaisei, Kanagawa 258-8577, Japan
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Mukai Atsushi
Frontier Core-Technology Laboratories, FUJIFILM Corporation, Kaisei, Kanagawa 258-8577, Japan
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YAGUCHI Junya
Frontier Core-Technology Laboratories, FUJIFILM Corporation
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OHGOH Tsuyoshi
Frontier Core-Technology Laboratories, FUJIFILM Corporation
関連論文
- Demonstration of 1.0 μm InGaAs High-Power and Broad Spectral Bandwidth Superluminescent Diodes by Using Dual Quantum Well Structure
- Demonstration of 1.0μm InGaAs High-Power and Broad Spectral Bandwidth Superluminescent Diodes by Using Dual Quantum Well Structure