Transport Properties of Closely-Packed Carbon Nanotubes Film on SiC Tuned by Si-Doping

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概要

• 論文の詳細を見る

• Here, we reveal origins of the planar electrical transport of closely-packed carbon nanotubes (CNTs) and silicon-doped CNTs (Si-CNTs) films. Their electrical resistivities increased with decreasing temperature, but exhibit a plateau below 60 K. This phenomenon can be well described using the simple-two-band model, which is often used to understand the electronic properties of graphite. Cryogenic energy-filtered transmission electron microscopy visualizes Si atoms dispersed finely in CNTs, preserving the structural features of CNTs. These Si atoms induced effective carriers above 150 K, while three-dimensional variable range hopping and weak localization are dominant in their transport below 50 and 10 K, respectively.

• 2012-10-25

著者

• TAKASE Koichi

  Department of Information and Image Sciences, Chiba University

• Kusunoki Michiko

  Materials Research And Development Laboratory Japan Fine Ceramics Center

• Maruyama Takehiro

  Department Of Nuclear Engineering Kyoto University

• Yoshida Kenta

  Nanostructures Research Laboratory Japan Fine Ceramics Center

• Takase Koichi

  Department of Physics, College of Science and Technology, Nihon University, Chiyoda, Tokyo 101-8308, Japan

• NORIMATSU Wataru

  Department of Applied Chemistry, Graduate School of Engineering, Nagoya University

• Norimatsu Wataru

  Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Yoshida Kenta

  Nanostructures Research Laboratory, Japan Fine Ceramics Center, Nagoya 456-8587, Japan

• MARUYAMA Takehiro

  Department of Applied Chemistry, Graduate School of Engineering, Nagoya University

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• Electromotive force measurement of lanthanides in liquid lead
• Transport Properties of Closely-Packed Carbon Nanotubes Film on SiC Tuned by Si-Doping
• Transport Properties of Closely-Packed Carbon Nanotubes Film on SiC Tuned by Si-Doping

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