UV Photodetectors Based on ZnO Nanorods: Role of Defect-Concentration

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概要

• 論文の詳細を見る

• UV photodetectors based on ZnO nanorods prepared by two methods have been fabricated by a simple drop casting procedure. The detectors show good performance at 375 nm giving satisfactory values of responsivity, external quantum efficiency and photoconductive gain. The performance of ZnO nanorods prepared at low temperatures, containing a larger concentration of defects, is found to be superior.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2011-10-25

著者

• Rao C.

  Materials Research Centre, Indian Institute of Science, Bangalore 560012, India

• Chitara Basant

  Materials Research Centre, Indian Institute of Science, Bangalore 560012, India

• Panchakarla Leela

  International Centre for Materials Science and CSIR Centre of Excellence in Chemistry, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P.O., Bangalore 560064, India

• Krupanidhi Salaru

  Materials Research Centre, Indian Institute of Science, Bangalore 560012, India

関連論文

• UV Photodetectors Based on ZnO Nanorods: Role of Defect-Concentration

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