Structural Characterization and Ultraviolet Photoresponse of GaN Nanodots Grown by Molecular Beam Epitaxy

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概要

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• The present work explores the electrical transport and UV photoresponse properties of GaN nanodots (NDs) grown by molecular beam epitaxy (MBE). Single-crystalline wurtzite structure of GaN NDs is verified by X-ray diffraction and transmission electron microscopy (TEM). The interdigitated electrode pattern was created and current--voltage (I--V) characteristics of GaN NDs were studied in a metal--semiconductor--metal configuration. Dark I--V characteristics of lateral grown GaN NDs obeyed the Frenkel--Poole emission model, and the UV response of the device was stable and reproducible with on/off. The responsivity of the detectors is found to be 330 A/W with an external quantum efficiency of 1100%.

• 2012-08-25

著者

• Krupanidhi S.

  Materials Research Centre Indian Institute Of Science

• KUMAR Mahesh

  Materials Research Centre, Indian Institute of Science

• Kumar Mahesh

  Materials Research Centre, Indian Institute of Science, Bangalore 560012, India

• BHAT Thirumaleshwara

  Materials Research Centre, Indian Institute of Science

• ROUL Basanta

  Materials Research Centre, Indian Institute of Science

• RAJPALKE Mohana

  Materials Research Centre, Indian Institute of Science

関連論文

• A Comparative Study of the Effect of Metallic Au and ReO3 Nanoparticles on the Performance of Silicon Solar Cells
• Structural Characterization and Ultraviolet Photoresponse of GaN Nanodots Grown by Molecular Beam Epitaxy
• Band-Structure Lineup at In0.2Ga0.8N/Si Heterostructures by X-ray Photoelectron Spectroscopy
• Structural Characterization and Ultraviolet Photoresponse of GaN Nanodots Grown by Molecular Beam Epitaxy

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