Band-Structure Lineup at In0.2Ga0.8N/Si Heterostructures by X-ray Photoelectron Spectroscopy

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概要

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• In0.2Ga0.8N layers were directly grown on Si(111) substrate by plasma-assisted molecular beam epitaxy (PAMBE). Structural characteristics of the as-grown InGaN epilayers were evaluated high resolution X-ray diffraction and composition of InGaN was estimated from photoluminescence spectra using the standard Vegard's law. High-resolution X-ray photoemission spectroscopy measurements were used to determine the band offset of wurtzite-In0.2Ga0.8N/Si(111) heterojunctions. The valence band of InGaN is found to be 2.08\pm 0.04 eV below that of Si. The conduction band offset (CBO) of InGaN/Si heterojunction is found {\sim}0.74 eV and a type-II heterojunction.

• 2012-02-25

著者

• Krupanidhi S.

  Materials Research Centre Indian Institute Of Science

• KUMAR Mahesh

  Materials Research Centre, Indian Institute of Science

• BHAT Thirumaleshwara

  Materials Research Centre, Indian Institute of Science

• ROUL Basanta

  Materials Research Centre, Indian Institute of Science

• RAJPALKE Mohana

  Materials Research Centre, Indian Institute of Science

• Kalghatgi A.

  Central Research Laboratory, Bharat Electronics, Bangalore 560013, India

関連論文

• A Comparative Study of the Effect of Metallic Au and ReO3 Nanoparticles on the Performance of Silicon Solar Cells
• Structural Characterization and Ultraviolet Photoresponse of GaN Nanodots Grown by Molecular Beam Epitaxy
• Band-Structure Lineup at In0.2Ga0.8N/Si Heterostructures by X-ray Photoelectron Spectroscopy
• Structural Characterization and Ultraviolet Photoresponse of GaN Nanodots Grown by Molecular Beam Epitaxy

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