Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology

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概要

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• We have used models based on the effective-mass approximation and Schrödinger--Poisson to design AlN/GaN multiple quantum well structures for intersubband transitions between two or three energy levels. The structures were realized by molecular beam epitaxy and the surface morphology and structural quality were investigated. We also investigated GaN waveguides that were fabricated using standard cleanroom techniques. Our work is focused on the various challenges associated to the fabrication of quantum cascade lasers based on group III--nitrides. These challenges are discussed in the light of our results.

• 2012-01-25

著者

• Larsson Anders

  Department Of Medical Sciences Clinical Chemistry University Hospital

• Andersson Thorvald

  Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden

• Larsson Anders

  Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden

• Stattin Martin

  Department of Microtechnology and Nanoscience --- MC2, Chalmers University of Technology, 412 96 Gothenburg, Sweden

• Ive Tommy

  Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden

• Berland Kristian

  Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden

• Fälth Fredrik

  Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden

• Hyldgaard Per

  Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden

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