Undoped Ga_<1-x>In_xSb Growm by Molecular Bearm Epitaxy on GaAs Substrates

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概要

• 論文の詳細を見る

• Growth by molecular beam epitaxy and characterisatiorn of unintentionally doped Ga_<1-x>In_xSb layers in the full compositional range on GaAs substrates are reported. The grown samples were characterised by reflection high-energy electron diffraction, X-ray diffraction and Hall-effect measurements. The layers had carrier concentrations below 6 × 10^16 cm^-3 with a maximum at × 〜 0.5, where the conduction switched from p-type to n-type. Temperature-dependent Hall-effect measurements together with mixed-conduction simulations showed that the n-type behaviour is caused by intrinsic electrons and the large electron-hole ratio rather than donor centres.

• 社団法人応用物理学会の論文
• 1997-02-15

著者

• ANDERSSON Thorvald

  Department of Physics, Chalmers University of Technology

• Roslund Joran

  Department Of Physics Chalmers University Of Technology And Goteborg University

• SWENSON Gosta

  Department of Physics, Chalmers University of Technology and Goteborg University

• Andersson Thorvald

  Department Of Physics Chalmers University Of Technology And Goteborg University

• Andersson Thorvald

  Department Of Physics Chalmers University Of Technology

• Swenson Gosta

  Department Of Physics Chalmers University Of Technology And Goteborg University

• Andersson Thorvald

  Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden

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• Undoped Ga_In_xSb Growm by Molecular Bearm Epitaxy on GaAs Substrates
• Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology

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