A Thermally-Reliable, Low-Resistivity Cu(Ir) and Cu(IrN) Alloy Films for Barrierless Cu Metallization

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概要

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• In this study, copper (Cu) alloy films developed by reactive co-sputtering of Cu with iridium (Ir) in an Ar/N2 atmosphere to render Cu(Ir) and Cu(IrNx) seed layers on barrierless Si substrates are found to exhibit great thermal stability, low resistivity, and a good adhesion feature. The Cu(Ir) and Cu(IrNx) films are annealed at 650 and 730 °C for 1 h, displaying good thermal stability with low leakage current for the latter and low resistivity values of 4.32 and 2.67 μ\Omega cm, respectively; no copper silicide formation occurs at the Cu--Si interface. The IrNx's thermal stability and low resistivity reveal that the Cu(IrNx) is a good candidate for advanced barrierless metallization in forming a new type of interconnect for electronic components, such as capacitors.

• 2012-05-25

著者

• Lin Chon-Hsin

  Department of Biotechnology, Asia--Pacific Institute of Creativity, Toufen, Miaoli 351, Taiwan

関連論文

• Copper–Holmium Alloy Film for Reliable Interconnects
• Cu(TiWNx) Film as a Barrierless Buffer Layer for Metallization Applications
• A Thermally-Reliable, Low-Resistivity Cu(Ir) and Cu(IrN) Alloy Films for Barrierless Cu Metallization

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