Copper–Holmium Alloy Film for Reliable Interconnects

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概要

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• We fabricate reliable interconnects via advanced barrierless metallization by cosputtering a pure copper (Cu) film with small amounts of holmium nitride (HoNx) on a silicon (Si) substrate. No noticeable interaction occurs between the resulting Cu(HoNx) film and the substrate even after heating at 660 °C for 1 h. The resistivity of the alloy film, which remains stable after five cycles of heating at 600 °C (total: 2.5 h), is high under the as-deposited condition, but decreases to ${\sim}3.0$ μ$\Omega$ cm after annealing. The leakage current of the alloy film is three times lower than that of the pure Cu film. The correlation between the leakage current and the time-dependent dielectric breakdown (TDDB) lifetime reveals that the alloy film has a TDDB lifetime of ${>}10$ years. Furthermore, the alloy film adheres better to the Si substrate than does the pure Cu film. Our alloy film thus has improved features that are desirable for a reliable interconnect.

• 2010-05-25

著者

• Lin Chon-Hsin

  Department of Biotechnology, Asia--Pacific Institute of Creativity, Toufen, Miaoli 351, Taiwan

• Chon-Hsin Lin

  Department of Environmental Engineering, Chin-Min Institute of Technology, Tou-Fen, Taiwan 351

• Leau Wen-Kuan

  Institute of Materials Engineering, National Taiwan Ocean University, Keelung, Taiwan 202

• Wu Cheng-Hui

  Graduate Institute of Materials Science and Technology, National Taiwan University of Science and Technology, Taipei 10607, Taiwan

関連論文

• Copper–Holmium Alloy Film for Reliable Interconnects
• Cu(TiWNx) Film as a Barrierless Buffer Layer for Metallization Applications
• A Thermally-Reliable, Low-Resistivity Cu(Ir) and Cu(IrN) Alloy Films for Barrierless Cu Metallization

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