Effect of Channel Dopant Non-uniformity on Transconductance Variability

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概要

• 論文の詳細を見る

• The effect of the channel dopant non-uniformity on metal--oxide--semiconductor field-effect transistor (MOSFET) transconductance variability is studied using the simple current model and the test MOSFETs having various channel width and length. It is found that this effect is significant for relatively large MOSFETs.

• 2012-09-25

著者

• Terada Kazuo

  Faculty Of Information Sciences Hiroshima City University

• Nishida Akio

  Production and Technology Unit, Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan

• Takeda Ryo

  Faculty of Information Sciences, Hiroshima City University, Hiroshima 731-3194, Japan

• Tsuji Katsuhiro

  Faculty of Information Sciences, Hiroshima City University, Hiroshima 731-3194, Japan

• Tsunomura Takaaki

  Production and Technology Unit, Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan

• Mogami Tohru

  Green Innovation Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305-8501, Japan

関連論文

• Implementation of the Multicolored SOR Method on a Vector Supercomputer (Special Issue on Parallel and Distributed Supercomputing)
• High-Temperature Properties of Drain Current Variability in Scaled Field-Effect Transistors Analyzed by Decomposition Method
• Origin of Larger Drain Current Variability in N-Type Field-Effect Transistors Analyzed by Variability Decomposition Method
• Test Circuit for Evaluating Characteristics Mismatch in Metal–Oxide–Semiconductor Field-Effect Transistor Pairs by Estimating Conductance Variation through Voltage Measurement
• Effect of Channel Dopant Non-uniformity on Transconductance Variability

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