Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors
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概要
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The wide bandgap of diamond, along with its extreme semiconductor properties, offers the promising route for deep-ultraviolet (DUV) detection, especially under solar-blind condition and harsh environments. The ideal photodetector should generally satisfy the 5S requirements such as high sensitivity, high signal-to-noise ratio, high spectral selectivity, high speed, and high stability. In this paper, we comprehensively investigate the DUV detectors fabricated from various kinds of single crystal diamonds such as boron-doped diamond homoepitaxial layer, intrinsic diamond homoepitaxial layers with different thicknesses, and single crystal diamond substrates. The post process such as hydrogen plasma treatment on the performance of the DUV detectors is also examined. The strategies to develop high-performance diamond DUV detectors are provided.
- 2012-09-25
著者
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Liao Meiyong
Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
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Alvarez Jose
Laboratoire de Génie Electrique de Paris (UMR 8507 CNRS), Ecole Supérieure d'Electricité, Universités Paris VI et Paris XI, F-91192 Gif-sur-Yvette Cedex, France
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Sang Liwen
Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
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Teraji Tokuyuku
Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
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Imura Masataka
Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
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Koide Yasuo
Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
関連論文
- Ultraviolet Detectors Based on Ultraviolet-Ozone Modified Hydrogenated Diamond Surfaces
- Comprehensive Investigation of Single Crystal Diamond Deep-Ultraviolet Detectors
- Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along \langle 11\bar{2}0 \rangle and \langle 1\bar{1}00 \rangle Zone-Axes of AlN for Polarity Determination
- Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along and Zone-Axes of AlN for Polarity Determination (Special Issue : Recent Advances in Nitride Semiconductors)