Fabrication and Characteristics of Nanoscale Stacked-Tunneling-Junctions on Graphite Flake Using Focused Ion Beam

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概要

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• We report the successful fabrication and characteristics of a nanoscale stack of tunneling junctions formed along the c-axis of thin graphite flakes. The stack was made by a three-dimensional focused-ion-beam etching method. First, a submicron bridge was patterned in a required junction width by normal-direction etching. By tilting the sample stage to 90°, two grooves on the bridge were etched from the lateral direction in order to create the required stack size. The stacked junctions showed a perfect c-axis transport behavior and nonlinear current--voltage (I--V) characteristics at all studied temperatures. We discussed the nonlinear I--V characteristics in detail using the Schottky barrier model and Fowler--Nordheim (FN) tunneling theory. The stack transport characteristics showed good agreement with FN tunneling behavior.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2011-06-25

著者

• Venugopal Gunasekaran

  Nano Materials and System Laboratory, Department of Mechanical System Engineering, Graduate School of Engineering, Jeju National University, Jeju 690-756, Republic of Korea

• Kim Sang-Jae

  Faculty of Mechatronics Engineering and Research Institute of Advanced Technology, Jeju National University, Jeju 690-756, Republic of Korea

• Kim Gui

  Faculty of Mechanical System Engineering, Jeju National University, Jeju 690-756, Republic of Korea

関連論文

• Fabrication and Characteristics of Nanoscale Stacked-Tunneling-Junctions on Graphite Flake Using Focused Ion Beam

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