Liquid Phase Deposition of Carbon Nitride Films for Application as Low-k Insulating Materials

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概要

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• CNx films are fabricated using liquid phase deposition by applying a DC bias voltage to Si substrates immersed in acrylonitrile. X-ray photoelectron spectra reveal that C, N, and O are major components of the deposited films. From analysis of C 1s and N 1s spectra, the major bonding state in the CNx film is attributed to a mixture of C≡N and partially hydrogenated C=N bonds. Metal--insulator--semiconductor capacitors incorporating the CNx insulating layers are fabricated to evaluate the electrical properties of the deposited films. The lowest dielectric constant k of the CNx film is determined to be 2.6 from the accumulation capacitance and the thickness of the film, suggesting that the CNx film formed by liquid phase deposition is a promising low-k material for use in ultralarge-scale integration multilevel interconnections.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2011-06-25

著者

• Kiyota Hideo

  School of Industrial Engineering, Tokai University, Kumamoto 862-8652, Japan

• Higashi Mikiteru

  School of Industrial Engineering, Tokai University, Kumamoto 862-8652, Japan

• Kurosu Tateki

  School of Information Science and Technology, Tokai University, Hiratsuka, Kanagawa 259-1292, Japan

• Chiba Masafumi

  School of High-Technology for Human Welfare, Tokai University, Numazu, Shizuoka 410-0395, Japan

関連論文

• Liquid Phase Deposition of Carbon Nitride Films for Application as Low-k Insulating Materials

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